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| SMBT 3906S PNP Silicon Switching Transistor Array * High DC current gain: 0.1mA to 100mA * Low collector-emitter saturation voltage * Two ( galvanic) internal isolated Transistors with high matching in one package * Complementary type: SMBT 3904S (NPN) 4 5 6 2 1 3 VPS05604 Type SMBT 3906S Marking Ordering Code s2A Q62702-A1202 Pin Configuration Package 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, T S = 115 C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 40 40 6 200 250 150 - 65...+150 mA mW C Unit V VCEO VCBO VEBO IC Ptot Tj Tstg RthJA RthJS 275 140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 SMBT 3906S Electrical Characteristics at TA =25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. 50 Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE 40 40 5 - V I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 10 A, IB = 0 Emitter-base breakdown voltage I E = 10 A, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 DC current gain 1) nA - I C = 100 A, V CE = 1 V I C = 1 mA, V CE = 1 V I C = 10 mA, VCE = 1 V I C = 50 mA, VCE = 1 V I C = 100 mA, V CE = 1 V Collector-emitter saturation voltage1) 60 80 100 60 30 - 300 V VCEsat 0.25 0.4 0.85 0.95 I C = 10 mA, I B = 1 mA I C = 50 mA, I B = 5 mA Base-emitter saturation voltage 1) VBEsat 0.65 - I C = 10 mA, I B = 1 mA I C = 50 mA, I B = 5 mA 1) Pulse test: t < 300s; D < 2% Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 SMBT 3906S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency typ. max. 4.5 10 12 10 400 60 4 Unit fT Ccb Ceb h11e h12e h21e h22e F 250 2 0.1 100 3 - MHz pF I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance k 10-4 s dB I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit output admittance I C = 2 mA, V CE = 5 V, f = 1 kHz Noise figure I C = 100 A, V CE = 5 V, R S = 1 k, f = 1 kHz, f = 200 Hz Delay time td - - 35 ns VCC = 3 V, I C = 10 mA, I B1 = 1 mA, VBE(off) = 0.5 V Rise time tr - - 35 VCC = 3 V, I C = 10 mA, I B1 = 1 mA, VBE(off) = 0.5 V Storage time tstg tf - - 225 75 VCC = 3 V, I C = 10 mA, I B1=I B2 = 1mA Fall time VCC = 3 V, I C = 10 mA, I B1=I B2 = 1mA Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 SMBT 3906S Test circuit Delay and rise time -3.0 V 275 <1.0 ns +0.5 V 10 k 0 -10.6 V D = 2% C <4.0 pF 300 ns EHN00059 Storage time and fall time -3.0 V <1.0 ns +9.1 V 0 -10.9 V 10 < t 1< 500 s D = 2% 10 k 275 C 1N916 <4.0 pF t1 EHN00060 Semiconductor Group Semiconductor Group 44 Sep-07-1998 1998-11-01 SMBT 3906S Total power dissipation Ptot = f (TA *;TS ) * Package mounted on epoxy 300 mW TS P tot 200 TA 150 100 50 0 0 20 40 60 80 100 120 C Kein 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 55 Sep-07-1998 1998-11-01 SMBT 3906S DC current gain h FE = f (I C) Saturation voltage IC = f (VBEsat, VCEsat) VCE = 10V, normalized 10 1 EHP00774 h FE = 10 EHP00767 2 mA h FE 5 C 10 2 5 125 C V CE 10 0 25 C 10 1 V BE 5 -55 C 5 10 -1 -1 10 10 0 5 10 0 5 10 1 mA 10 2 0 0.2 0.4 0.6 0.8 1.0 V 1.2 C V BE sat , V CE sat Short-circuit forward current transfer ratio h 21e = f(I C) Open-circuit output admittance h 22e = f (IC) VCE = 10V, f = 1MHz EHP00770 VCE = 10V, f = 1MHz 10 3 10 2 s EHP00771 h 21e 5 h 22e 5 10 2 10 1 5 5 10 1 -1 10 5 10 0 mA 5 10 1 10 0 -1 10 5 10 0 mA 5 10 1 C C 66 Semiconductor Group Semiconductor Group Sep-07-1998 1998-11-01 SMBT 3906S Delay time t d = f (IC) Rise time t r = f (I C) EHP00772 Storage time t stg = f(IC) 10 3 ns 10 3 ns EHP00762 t r ,t d 10 2 tr td ts h FE = 10 10 2 25 C 125 C h FE = 20 10 VCC = 3 V 15 V 40 V h FE = 20 10 10 1 V BE = 2 V 0V 10 1 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 C C Fall time t f = f (I C) Rise time tr = f (IC) 10 3 ns 25 C 125 C EHP00773 10 3 ns EHP00764 tr 25 C tf VCC = 40 V 10 2 10 2 125 C VCC = 40 V h FE = 10 h FE = 20 10 1 h FE = 10 10 1 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 C C 77 Semiconductor Group Semiconductor Group Sep-07-1998 1998-11-01 SMBT 3906S Input impedance Open-circuit reverse voltage transfer ratio h12e = f (I C) h 11e = f (IC) VCE = 10V, f = 1kHz 10 2 EHP00768 VCE = 10V, f = 1kHz h 11e k 10 1 5 10 0 5 10 -1 -1 10 5 10 0 mA 10 1 C Semiconductor Group Semiconductor Group 88 Sep-07-1998 1998-11-01 |
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